Selective excitation and photoinduced bleaching of defects in InAlGaAs/GaAs high-power diode lasers

Applied Physics Letters

Volumn 77, Issue 5, 2000, Pages 747-749

  Tomm, J W ^a   Barwolff A ^a   Elsaesser, T ^a   Luft, J ^a,b  

^a MAX BORN INSTITUT   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000472639     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.127106     Document Type: Article

References (11)

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10. Note that band bending at the unbiased p-n-junction is neglected in the scheme of Fig. 3(b).
11. Estimates taking into account the PC phase difference between defect- and QW-related PC signal provide an effective lifetime of τ=(6±2) ms for the trapped carriers.