Advances in the modeling of MOVPE processes

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 1-7

  Karpov, S Yu ^a  

^a SOFT IMPACT LTD   (Russian Federation)

Author keywords

A1. Computer simulation; A1. Segregation; A1. Surface processes; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

COMPOSITION; COMPUTER SIMULATION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR MATERIALS; SURFACE PHENOMENA;

COMMERCIAL REACTORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037291833     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01838-9     Document Type: Conference Paper

References (44)

1. G.B. Stringfellow, Organometallic Vapor-Phase Epitaxy, Academic Press, New York, 1999, 572p (Chapter 10).
2. Kadinski L., Makarov Yu.N., Schäfer M., Vasil'ev M.G., Yuferev V.S. J. Crystal Growth. 146:1995;209.
3. Durst F., Kadinski L., Makarov Yu.N., Schäfer M., Vasil'ev M.G., Yuferev V.S. J. Crystal Growth. 172:1997;389.
4. Bergunde T., Dauelsberg M., Kadinski L., Makarov Yu.N., Weyers M., Schmitz D., Strauch G. J. Crystal Growth. 170:1997;66.
5. Wahl G. Thin Solid Films. 40:1977;13.
6. Visser E.P., Kleijn C.R., Govers C.A.M., Hoogendoorn C.J., Giling L.J. J. Crystal Growth. 94:1989;929.
7. Patnaik S., Brown R.A., Wang C.A. J. Crystal Growth. 96:1989;153.
8. Jensen K.F. J. Crystal Growth. 98:1989;148.
9. Quazzani J., Rosenberger F. J. Crystal Growth. 100:1990;545.
10. Makarov Yu.N., Zhmakin A.I. Crystal Res. Technol. 25:1990;31.
11. Jensen K.F., Fotiadis D.I., Mountziaris T.J. J. Crystal Growth. 107:1991;1.
12. C.R. Klejn, In: M. Meyyapan, (Ed.), Computational Modeling in Semiconductor Processing, Artech House, Inc., Boston, 1995 (Chapter 4).
13. Han J., Figiel J.J., Crawford M.H., Banas M.A., Bartram M.E., Biefeld R.M., Song Y.K., Nurmikko A.V. J. Crystal Growth. 195:1998;291.
14. Choi S.C., Kim J.-H., Choi J.Y., Lee K.J., Lim K.Y., Yang G.M. J. Appl. Phys. 87:2000;172.
15. Mihopoulos T.G., Gupta V., Jensen K.F. J. Crystal Growth. 195:1998;733.
16. Creighton J.R., Breiland W.G., Coltrin M.E. Electrochem. Soc. Proc. 2002-2003:2002;28.
17. Keller S., Parish G., Fini P.T., Heikman S., Chen C.-H., Zhang N., DenBaars S.P., Mishra U.K., Wu Y.-F. J. Appl. Phys. 86:1999;5850.
18. Chen C.H., Liu H., Steigerwald D., Imler W., Kuo C.P., Crawford M.G. Mat. Res. Soc. Symp. Proc. 395:1996;103.
19. Jacko M.G., Price S.J.W. Can. J. Chem. 41:1963;1560.
20. Hebner G.A., Killen K.P. J. Appl. Phys. 67:1990;1598.
21. Talalaev R.A., Yakovlev E.V., Karpov S.Yu., Yu Evstratov I., Vorob'ev A.N., Makarov Yu.N. Phys. Stat. Solidi A. 176:1999;253.
22. Tirtowidjojo M., Pollard R. J. Crystal Growth. 93:1989;420.
23. Coltrin M.E., Kee R.J. Mat. Res. Soc. Symp. Proc. 145:1989;119.
24. Mountziaris T.J., Jensen K.F. J. Electrochem. Soc. 138:1991;2426.
25. Masi M., Simka H., Jensen K.F., Kuech T.F., Potemski R. J. Crystal Growth. 124:1992;483.
26. Theodoropoulos C., Moffat H.K., Mountziaris T.J. Mat. Res. Soc. Symp. Proc. 490:1998;155.
27. Creighton J.R., Moffat H.K., Baucom K.C. Electrochem. Soc. Proc. 98-23:1999;75.
28. Theodoropoulos C., Ingle N.K., Mountziaris T.J., Chen Z.-Y., Liu P.L., Kioseoglou G., Petrou A. J. Electrochem. Soc. 142:1995;2086.
29. Masi M., Cavallotti C., Radaelli G., Carra S. Cryst. Res. Technol. 32:1997;1125.
30. Ingle N.K., Mountziaris T.J. Mat. Res. Soc. Symp. Proc. 282:1993;99.
31. Mihopoulos T.G., Gupta V., Jensen K.F. J. Crystal Growth. 195:1998;733.
32. Karpov S.Yu., Prokofjev V.G., Yakovlev E.V., Talalaev R.A., Makarov Yu.N. MRS J. Nitride Semicond. Res. 4:1999;4.
33. Yakovlev E.V., Talalaev R.A., Shpolyanskiy Yu.A., Makarov Yu.N., Lowry S.A. Electrochem. Soc. Proc. 2000-13:2000;723.
34. Talalaev R.A., Yakovlev E.V., Karpov S.Yu. J. Crystal Growth. 230:2001;232.
35. Yakovlev E.V., Shpolyanskiy Y.A., Talalaev R.A., Karpov S.Yu., Makarov Yu.N., Bergunde T., Lowry S.A. Electrochem. Soc. Proc. 2001-2013:2001;292.
36. Hurle D.T.J. J. Appl. Phys. 85:1999;6957.
37. Cohen R.M. Mat. Sci. Eng. R. 20:1997;1.
38. Gandouzi M., Bourgoin J.C., El Mir L., Stellmacher M., Ortiz V. J. Crystal Growth. 234:2002;279.
39. Talalaev R.A., Yakovlev E.V., Karpov S.Yu., Makarov Yu.N. Mat. Res. Soc. Proc. 639:2001;G3.18.
40. Karpov S.Yu., Talalaev R.A., Evstratov I.Yu., Makarov Yu.N. Phys. Stat. Solidi (a). 192:2002;417.
41. R.A. Talalaev, S.Yu. Karpov, I.Yu. Evstratov, Yu.N. Makarov, Phys. Stat. Solidi (a), accepted for publication.
42. Grillot P.N., Stockman S.A., Huang J.W., Bracht H., Chang Y.L. J. Appl. Phys. 91:2002;4891.
43. Talalaev R.A., Yakovlev E.V., Karpov S.Yu., Makarov Yu.N., Schoen O., Heuken M., Strauch G., Juergensen H. MRS J. Nitride Semicond. Res. 4:1999;5.
44. Schwambera M., Schön O., Schineller B., Schmitz D., Heuken M. J. Crystal Growth. 203:1999;340.