Acceptor diffusion and segregation in (Al xGa 1-x) 0.5In 0.5P heterostructures

Journal of Applied Physics

Volumn 91, Issue 8, 2002, Pages 4891-4899

  Grillot, P N ^a   Stockman, S A ^a   Huang, J W ^a   Bracht, H ^b   Chang, Y L ^c  

^a Philips Lumileds Lighting Company   (United States)

^b UNIVERSITY OF MÜNSTER   (Germany)

^c AGILENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR SPECIES; ACTIVE LAYER; ADJACENT LAYERS; CHARGE SEPARATIONS; COMPOSITIONAL DIFFERENCE; CONFINING LAYERS; DOPANT INCORPORATION; GROWTH METHOD; HETERO INTERFACES; HIGH TEMPERATURE; HOLE EFFECTIVE MASS; LOW BAND GAP; P-LAYER; SEGREGATION RATIO; THEORETICAL MODELS; VALENCE BAND OFFSETS;

ELECTRIC FIELDS; ENERGY GAP; EPITAXIAL GROWTH; GALLIUM; HETEROJUNCTIONS; ION IMPLANTATION; MAGNESIUM; MANGANESE; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

ALUMINUM;

EID: 0037091663     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1461060     Document Type: Article

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