SCOPUS 정보 검색 플랫폼

Volumn 230, Issue 1-2, 2001, Pages 232-238

On low temperature kinetic effects in metal-organic vapor phase epitaxy of III-V compounds

(4) Talalaev, R A a Yakovlev, E V a Karpov, S Yu a Makarov, Yu N b

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

A1. Adsorption; A1. Desorption; A1. Growth models; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ADSORPTION; DECOMPOSITION; DESORPTION; GALLIUM NITRIDE; LOW TEMPERATURE EFFECTS; MATHEMATICAL MODELS; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SURFACE CHEMISTRY;

GROWTH MODEL;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0035426404 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01354-9 Document Type: Conference Paper

Times cited : (39)

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