Heat transfer and mass transport in a multiwafer MOVPE reactor: Modelling and experimental studies

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 66-71

  Bergunde, T ^a   Dauelsberg, M ^b   Kadinski, L ^b   Makarov, Yu N ^b   Weyers, M ^a   Schmitz, D ^c   Strauch, G ^c   Jurgensen H ^c  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; HEAT TRANSFER; MASS TRANSFER; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

MULTIWAFER MOVPE REACTOR; PARASITIC WALL DEPOSITIONS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030653410     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00551-9     Document Type: Article

References (9)

1. P.M. Frijlink, J.L. Nicolas, H.P.M.M. Ambrosius, R.W.M. Linders, C. Waucquez and J.M. Marchal, J. Crystal Growth 115 (1991) 203.
2. T. Bergunde, F. Durst, L. Kadinski, Yu.N. Makarov, M. Schäfer and M. Weyers, J. Crystal Growth 145 (1994) 630.
3. T. Bergunde, D. Gutsche, L. Kadinski, Yu.N. Makarov and M. Weyers, J. Crystal Growth 146 (1995) 564.
4. T. Bergunde, M. Dauelsberg, Yu. Egorov, L. Kadinski, Yu.N. Makarov, M. Schäfer, G. Strauch and M. Weyers, in: Simulation of Semiconductor Devices and Processes, Vol. 6, Eds. H. Ryssel and P. Pichler (Springer, New York, 1995) pp. 328-331.
5. C.R. Kleijn, Chemical vapor deposition processes, in: Computational Modelling in Semiconductor Processing, Ed. M. Meyyappan (Artech House, 1995) ch. 4, pp. 97-230.
6. C.A. Larsen, N.I. Buchan, S.H. Li and G.B. Stringfellow, J. Crystal Growth 102 (1989) 103.
7. L. Kadinski and M. Perić, Int. J. Num. Meth. Heat Fluid Flow 6 (1996), to be published.
8. F. Durst, L. Kadinski and M. Schäfer, J. Crystal Growth 146 (1995) 202.
9. L. Kadinski, Y.N. Makarov, M. Schäfer, V. Yuferev and M. Vasil'ev, J. Crystal Growth 146 (1995) 209.