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Journal of Crystal Growth

Volumn 234, Issue 2-3, 2002, Pages 279-284

Antisite incorporation during epitaxial growth of GaAs

(5) Gandouzi, M a,b Bourgoin, J C a El Mir, L b Stellmacher, M c Ortiz, V c

a SORBONNE UNIVERSITÉ (France)

b UNIVERSITY OF GABES (Tunisia)

c Laboratoire Central de Recherches (France)

Author keywords

A3. Molecular beam epitaxy; A3. Vapor phase epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

ACTIVATION ENERGY; DEFECTS; EPITAXIAL GROWTH; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; SUBSTRATES;

ANTISITE DEFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036131748 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01691-8 Document Type: Article

Times cited : (7)

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