Bias sweep rate effects on quasi-static capacitance of MOS capacitors

IEEE Transactions on Electron Devices

Volumn 44, Issue 6, 1997, Pages 1009-1012

  Hauser, John R ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CAPACITORS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SUBSTRATES; VOLTAGE MEASUREMENT;

BIAS SWEEP RATE EFFECTS;

MOS DEVICES;

EID: 0031167745     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.585558     Document Type: Article

References (7)

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3. J. Koomen, "Investigation of the MOST channel conductor in weak inversion," Solid-State Electron., vol. 16, p. 801, 1973.
4. C. G. Sodini, T. W. Kkstedt, and J. L. Moll, "Charge accumulation and mobility in thin dielectric MOS transistors," Solid-State Electron., vol. 25, p. 833, 1982.
5. N. Arora, MOSFET Models for VLSI Circuit Simulation. New York: Springer-Verlag, 1993.
6. C.-L. Huang and N. D. Arora, "Measurements and modeling of MOSFET I-V characteristics with polysilicon depletion effect," IEEE Trans. Electron Devices, vol. 40, p. 2330, 1993.
7. B. Ricco, R. Versari, and D. Esseri, "Characterization of polysilicon-gate depletion in MOS structures," IEEE Electron Device Lett., vol. 17, p. 103, 1996.