Soft breakdown in ultra-thin oxides

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 301-306

  Weir, B E ^a   Silverman, P J ^a   Alers, G B ^a   Monroe, D ^a   Alam, M A ^a   Sorsch, T W ^a   Green, M L ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; ELECTRON TUNNELING; GATES (TRANSISTOR); OXIDES; RELIABILITY; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DIELECTRIC BREAKDOWN; LOCALIZED TUNNELING PATH; RAMP ALGORITHMS; RAMPED CURRENT MEASUREMENT;

ULTRATHIN FILMS;

EID: 0033331072     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-301     Document Type: Conference Paper

References (10)

1. D. R Volters and J. F. Verwey, "Breakdown and Wearout Phenomena in SiQj Films," Chap. 6 p.329, in Instabilities in Silicon Devices. G. M. Barbottin and A. Vapaille Eds., 1986 Elscvier Science Publishers.
2. K. R Farmer, R. Saletti, and R A. Buhrman, Applied Physics Letters Vol. 52,1988, pp. 1749-1751.
3. M. Depas, T. Ni gam, and M. M. Heyns, IEEE TED, Vol. 43, No. 9, p. 1499,1996 and references thereia
4. B. E Weir, P. J. Silverman, D. Monroe, K. S. Krisch, M. Alam, G. Alers, T. W. Sorsch, G. L Timp, F. Baumann, C. T. Liu, Y. Ma, D. Hwang, IEDM Tech. Digest p. 73, (1997).
5. F. Crupi, R. Degraeve, G. Grocseneken.T. Ni gam, and R Macs, ffiEETED, Vol. 45, No. 11, p. 2329,1998.
6. E Wu, E Nowak, 1. Aitken, W. Abadeer, L. K. Han, and S. Lo, IEDM Tech. Digest p. 187 (1998).
7. The initial voltage ranged from 5.27-5.32V in all cases except for the 0.04cm2 capacitor which ranged from 5.37-5.42V.
8. T. Pompl, H. Wurzer, M. Kerbcr, R C. W. Wilkins, I. Eiscle, IEEE IRPS Proceedings p. 82 (1999).
9. The stress was removed within approximately 30 seconds after the breakdown. In the constant-vol tage case, breakdown increases the current and therefore the stress on the oxide, while in constant-current, breakdown decreases the voltage and therefore the stress on the oxide. An interesting experiment would be to remove the stress in a shorter time after breakdown and compare the two cases.
10. G. B. Alers, B. E Weir, M. R Frei, and D. Monroe, IEEE IRPS Proceedings p. 410 (1999).