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Volumn 91-92, Issue , 2002, Pages 274-279

TEM characterisation of defects, strains and local electric fields in AlGaN/InGaN/GaN structures

a UNIVERSITY OF BRISTOL (United Kingdom)

Author keywords

Dislocations; Electric field measurement; Electron holography; GaN; Large angle convergent beam electron diffraction; Transmission electron microscopy

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC FIELDS; ELECTRON HOLOGRAPHY; EPITAXIAL GROWTH; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

LARGE ANGLE CONVERGENT BEAM ELECTRON DIFFRACTION (LACBED);

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0037197445 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(01)01039-X Document Type: Conference Paper

Times cited : (2)

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