Characterization of defects and piezoelectric fields in InGaN/GaN layers by transmission electron microscopy

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 66, Issue 1, 1999, Pages 33-38

  Cherns, D ^a   Barnard, J ^a   Mokhtari, H ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOTUBES; NITRIDES; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0033284754     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00143-9     Document Type: Article

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