Comparison of donor and acceptor levels in undoped, high quality β-FeSi2 films grown by MBE and multi-layer method

International Journal of Modern Physics B

Volumn 16, Issue 28-29, 2002, Pages 4314-4317

  Takakura, K ^a   Seki, N ^b   Suemasu, T ^b   Hasegawa, F ^b  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

IRON; SILICON DERIVATIVE;

ATOMIC FORCE MICROSCOPY; CONFERENCE PAPER; ELECTRONICS; FILM; OPTICS; SEMICONDUCTOR; TEMPERATURE DEPENDENCE;

EID: 0037146238     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0217979202015339     Document Type: Conference Paper

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