Capture kinetics at deep-level defects in lattice-mismatched GaAs-based heterostructures

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 757-760

  Yastrubchak, O ^a   Wosinski T ^a   Makosa A ^a   Figielski, T ^a   Toth A L ^b  

^a INSTITUTE OF PHYSICS   (Poland)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Capture kinetics; Deep levels; Dislocations; Semiconductor heterostructures

Indexed keywords

CHARGE CARRIERS; CRYSTAL LATTICES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRON TRAPS; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE;

CAPTURE KINETICS; DEEP-LEVEL DEFECTS;

HETEROJUNCTIONS;

EID: 0035675494     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00828-6     Document Type: Article

References (11)