Influence of metal impurities on lifetime

ASTM Special Technical Publication

Volumn , Issue 1340, 1998, Pages 294-304

  Miyazaki, Morimasa ^a  

^a SUMCO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; COPPER; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DEGRADATION; IMPURITIES; IRON; MICROWAVES; MOS CAPACITORS; NICKEL; PHOTOCONDUCTIVITY;

GENERATION LIFETIME; MICROWAVE PHOTOCONDUCTIVE DECAY; RECOMBINATION LIFETIME; SURFACE PHOTOVOLTAGE;

SILICON WAFERS;

EID: 13044282469     PISSN: 10403094     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)

1. Takizawa, R., Nakanishi, T. and Osawa, A., "Degradation of Metal-Oxide-Semiconductor Devices Caused by Iron Impurities on the Silicon Wafer Surface," J. Appl. Phys., Vol.62, No.15, 1987, pp.4933-4935.
2. Hourai, M., Naridomi, T., Oka, Y., Murakami, K., Sumita, S.,Fujino, N and Shiraiwa, T., "A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon Wafer," Jpn. J. Appl. Phys., Vol.27, No. 12, 1988, pp.L2361-L2363.
3. Hockl, B., Range, K.-J., Stallhofer, P. and Fobry, L., "Correlation Between DLTS and TRXFA Measurements of Copper and Iron Contaminations in FZ and CZ Silicon Wafers;Application to Gettering Efficiencies," J. Electrochem. Soc., Vol.139, No.5, 1992, pp.1495-1498.
4. Miyazaki, M., Miyazaki, S., Kitamura, T., Aoki, T., Nakashima, Y., Hourai, M. and Shigematsu, T., "Influence of Contamination in Czochralski-Grown Silicon Single Crystals on LSI-Yield Related Crystal Quality Charaacteristics," Jpn, J. Appl. Phys., Vol.34, No.2A, 1995, pp.409-413.
5. Brotherton, S.D., Bradley, P. and Gill, A., "Iron and Iron-Boron Complex in Silicon," J. Appl. Phys., Vol.57, No.15, 1985, pp.1941-1943.
6. Shockley, W. and Read, W.T., Jr., "Statistics of the Recombinayions of Holes and Electrons," Phys. Rev., Vol.87, No.5, 1952, pp.835-842.
7. Schroder, D.K., "The Concept of Generation Lifetimes in Semiconductors", IEEE Trans. Electrron Devices, Vol.Ed-29, No.8, 1982, pp.32-34.