Minority carrier lifetime of p-type silicon containing oxygen precipitates: influence of injection level and precipitate size/density

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 244-249

  Porrini, M ^a   Tessariol, P ^b  

^a MEMC Electronic Materials   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL GROWTH FROM MELT; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); MATHEMATICAL MODELS; OXIDATION; OXYGEN; PRECIPITATION (CHEMICAL); PROBES;

CARRIER LIFETIME; CZOCHRALSKI SILICON; INJECTION LEVEL; MICROWAVE PROBE PHOTOCONDUCTIVE DECAY TECHNIQUE; SURFACE PHOTOVOLTAGE TECHNIQUE;

SILICON WAFERS;

EID: 0033892590     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00472-9     Document Type: Article

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