Interfacial and defect structures in multilayered GaN/AlN films

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13277-13283

  Komninou, Ph ^a   Kehagias, Th ^a   Kioseoglou, J ^a   Dimitrakopulos, G P ^a   Sampath, A ^b   Moustakas, T D ^b   Nouet, G ^c   Karakostas, Th ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b Boston University   (United States)

^c LABORATOIRE CRISMAT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); TRANSMISSION ELECTRON MICROSCOPY;

DEFECT STRUCTURES; INTERLAYERS;

MULTILAYERS;

EID: 0037122075     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/378     Document Type: Article

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