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Volumn 595, Issue , 2000, Pages
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Role of the multi buffer layer technique on the structural quality of GaN
a a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
DEPOSITION;
DISLOCATIONS (CRYSTALS);
HIGH TEMPERATURE PROPERTIES;
LOW TEMPERATURE OPERATIONS;
SAPPHIRE;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
SUBSTRATES;
TRANSMISSION ELECTRON MICROSCOPY;
LOW TEMPERATURE GALLIUM NITRIDE;
MULTI BUFFER LAYER TECHNIQUE;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 17144453388
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (4)
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