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Volumn 595, Issue , 2000, Pages

Role of the multi buffer layer technique on the structural quality of GaN

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DISLOCATIONS (CRYSTALS); HIGH TEMPERATURE PROPERTIES; LOW TEMPERATURE OPERATIONS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

EID: 17144453388     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (2)

References (4)
  • Reference 정보가 존재하지 않습니다.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.