Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 299-303

  Sanchez, A M ^a   Pacheco, F J ^a   Molina, S I ^a   Stemmer, J ^b   Aderhold, J ^b   Graul, J ^b  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; HIGH TEMPERATURE PROPERTIES; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; SAPPHIRE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035932234     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00645-0     Document Type: Article

References (18)