Transmission electron microscopy of semiconductor quantum dots

Journal of Microscopy

Volumn 199, Issue 2, 2000, Pages 130-140

  Liu, C P ^a   Miller, P D ^a   Henstrom, W L ^a   Gibson, J M ^b  

^a United States of America   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Ge Si; InAs GaAs; Phase amplitude diagram; Quantum dots; Semiconductor heterostuctures; Shape measurement; Size measurement; Strain contrast; Strain measurement; Suppressed diffraction imaging

Indexed keywords

DIFFRACTION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; INDIUM ARSENIDE; NANOCRYSTALS; SEMICONDUCTOR QUANTUM DOTS; STRAIN MEASUREMENT;

DIFFRACTION IMAGING; GE/SI; INAS/GAAS; PHASE-AMPLITUDE DIAGRAM; QUANTUM DOT; SEMICONDUCTOR HETEROSTUCTURES; SHAPE MEASUREMENTS; SIZE MEASUREMENTS; STRAIN CONTRAST; STRAINS MEASUREMENTS; SUPPRESSED-DIFFRACTION IMAGING;

ASPECT RATIO;

ARSENIC; GALLIUM; GERMANIUM; INDIUM; SILICON;

ACCURACY; ARTICLE; DIFFRACTION; PRIORITY JOURNAL; SEMICONDUCTOR; SIGNAL NOISE RATIO; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0033859596     PISSN: 00222720     EISSN: None     Source Type: Journal    
DOI: 10.1046/j.1365-2818.2000.00729.x     Document Type: Article

References (19)

1. Transmission electron microscopy analysis of the shape and size of semiconductor quantum dots
2. Elastic misfit stress relaxation in highly strained InGaAs/GaAs structures
3. Strain measurements in thin film structures by convergent beam electron diffraction
4. Diffraction contrast from spherical symmetrical coherency strains
5. Stress relaxation in highly strained InAs/GaAs structures as studied by Finite element analysis and transmission electron microscopy
6. Profiling Ge islands in Si by large angle convergent beam electron diffraction
7. Shape transition in growth of strained islands
8. Dislocation-free Stranski-Krastanow growth of Ge on Si (100)
9. 1-(x)Ge(x)/Si(001)
10. SiGe island shape transitions induced by elastic repulsion
11. 1-(x)As/GaAs by high-resolution electron microscopy and image processing
12. Minimum energy configuration of epitaxial material clusters on a lattice-mismatched substrate
13. Strain in coherent Ge quantum islands on Si measured by transmission electron microscopy
14. Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes
15. TEM measurement of strain in coherent quantum heterostructures
16. Direct measurement of strain in a Ge island on Si (001)
17. Coarsening of self-assembled Ge quantum dots on Si (001)
18. Strain in nanoscale germanium hut clusters on Si (001) studied by X-ray diffraction