Atomic-force-microscopy investigation of the formation and evolution of Ge islands on GexSi1-x strained layers

Applied Physics Letters

Volumn 77, Issue 3, 2000, Pages 391-393

  Huang, C J ^a   Li, D Z ^a   Yu, Z ^a   Cheng, B W ^a   Yu, J Z ^a   Wang, Q M ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000358529     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126986     Document Type: Article

References (10)

1. J. Tersoff and F. K. LeGoues, Phys. Rev. Lett. 72, 3570 (1994).
2. V. A. Shchukin, N. N. Ledentsov, P. S. Kop'ev, and D. Bimberg, Phys. Rev. Lett. 75, 2968 (1995).
3. I. Daraka and A.-L. Barabasi, Phys. Rev. Lett. 79, 3708 (1997).
4. E. Mateeva, P. Sutter, and M. G. Lagally, Appl. Phys. Lett. 74, 567 (1999).
5. T. I. Kamins, E. C. Carr, R. S. Williams, and S. J. Rosner, J. Appl. Phys. 81, 211 (1997).
6. G. Capellini, L. Di Gaspare, F. Evangelisti, and E. Palange, Appl. Phys. Lett. 70, 493 (1997).
7. Z. Yu and C. J. Huang (unpublished).
8. Y. Shiraki, in Chemical Beam Epitaxy and Related Techniques, edited by J. S. Foord, G. J. Davies, and W. T. Tsang (Wiley, Chichester, 1997).
9. I. P. Ipatova, V. G. Malyshkin, A. A. Maradudin, V. A. Shchukin, and R. F. Wallis, Phys. Rev. B 57, 12968 (1998).
10. I. Daraka, J. Tersoff, and A.-L. Barabasi, Phys. Rev. Lett. 82, 2753 (1999).