Formation and optical properties of carbon-induced Ge dots

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1593-1597

  Eberl, K ^a   Schmidt, O G ^a   Schieker, S ^a   Jin Phillipp, N Y ^b   Phillipp, F ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

INDIRECT RADIATIVE RECOMBINATION; VERTICAL STACKING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032116556     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00077-X     Document Type: Article

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