Electrical properties of carbon nitride films on silicon

Journal of Applied Physics

Volumn 91, Issue 12, 2002, Pages 9915-9918

  Konofaos, N ^a   Evangelou, E K ^a   Logothetidis, S ^b   Gioti, M ^b  

^a UNIVERSITY OF IOANNINA   (Greece)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NITRIDE FILMS; ELECTRICAL CHARACTERISTIC; ELECTRICAL MEASUREMENT; FREE CHARGE; FUNCTION OF FREQUENCY; INSULATING PROPERTIES; LOSS FACTOR; METAL-INSULATOR SEMICONDUCTOR DEVICES; NITROGEN CONCENTRATIONS; NITROGEN CONTENT; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE;

CARBON; CARBON NITRIDE; ELECTRIC PROPERTIES; MAGNETRON SPUTTERING; MIM DEVICES;

CARBON FILMS;

EID: 0037097907     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1479479     Document Type: Article

References (19)

1. E. Boettger, A. Bluhm, X. Jiang, L. Schaefer, and C. P. Klages, J. Appl. Phys. 77, 6332 (1995). jap JAPIAU 0021-8979
2. N. Takada, K. Arai, S. Nitta, and S. Nonomura, Appl. Surf. Sci. 113/114, 274 (1997). asu ASUSEE 0169-4332
3. P. Stumm, D. A. Drabold, and P. A. Fedders, J. Appl. Phys. 81, 1289 (1997). jap JAPIAU 0021-8979
4. M. Chhowalla, J. Robertson, C. W. Chen, S. R. P. Silva, C. A. Davis, G. A. J. Amaratunga, and W. I. Milne, J. Appl. Phys. 81, 139 (1997). jap JAPIAU 0021-8979
5. S. Logothetidis, H. Lefakis, and M. Gioti, Carbon 36, 757 (1998). car CRBNAH 0008-6223
6. N. M. J. Conway, W. I. Milne, and J. Robertson, Diamond Relat. Mater. 7, 477 (1998). drm DRMTE3 0925-9635
7. B. Kleinsorge, A. Ilie, M. Chhowalla, W. Fukarek, W. I. Milne, and J. Robertson, Diamond Relat. Mater. 7, 472 (1998). drm DRMTE3 0925-9635
8. M. Gioti and S. Logothetidis, Diamond Relat. Mater. 7, 444 (1998). drm DRMTE3 0925-9635
9. E. Evangelou, N. Konofaos, S. Logothetidis, and M. Gioti, Carbon 37, 871 (1999). car CRBNAH 0008-6223
10. N. Konofaos, E. Evangelou, S. Logothetidis, and M. Gioti, Mater. Sci. Eng., B 71, 315 (2000). msb MSBTEK 0921-5107
11. E. Broitman, N. Hellgren, K. Järrendahl, M. P. Johansson, S. Olafsson, G. Radnóczi, J.-E. Sundgren, and L. Hultman, J. Appl. Phys. 89, 1184 (2001). jap JAPIAU 0021-8979
12. G. Soto, E. C. Samano, R. Machorro, M. H. Faría, and L. Cota-Avainza, Appl. Surf. Sci. 183, 246 (2001). asu ASUSEE 0169-4332
13. M. Lejeune, O. Durand-Drouhin, K. Zellama, and M. Benlahsen, Solid State Commun. 120, 337 (2001). ssc SSCOA4 0038-1098
14. C. Popov, M. F. Plass, L. M. Zambov, and W. Kulisch, Surf. Coat. Technol. 142-144, 688 (2001). sct SCTEEJ 0257-8972
15. A. G. Fitzgerald, L. Jiang, M. J. Rose, and T. J. Dines, Appl. Surf. Sci. 175-176, 525 (2001). asu ASUSEE 0169-4332
16. M. Aono, S. Nitta, T. Katsuno, T. Itoh, and S. Nonomura, Appl. Surf. Sci. 159-160, 341 (2000). asu ASUSEE 0169-4332
17. A. Laskarakis, S. Logothetidis, C. Charitidis, M. Gioti, Y. Panayiotatos, M. Handrea, and W. Kautek, Diamond Relat. Mater. 10, 1179 (2001). drm DRMTE3 0925-9635
18. E. Nicollian and J. R. Brews, (MOS) Physics and Technology (Wiley, New York, 1982).
19. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).