Back Bias Effects in AlGaN/GaN HFETs

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 195-198

  Uren, M J ^a   Herbert, D ^a   Martin, T ^a   Hughes, B T ^a   Birbeck, J ^a   Balmer, R ^a   Pidduck, A J ^a   Jones, S K ^b  

^a QINETIQ   (United Kingdom)

^b Marconi Optical Components   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013274778     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<195::AID-PSSA195>3.0.CO;2-9     Document Type: Article

References (10)

1. Y.-F. WU et al., IEEE Trans. Electron Dev. 48, 586 (2001).
2. L. F. EASTMAN et al., IEEE Trans. Electron Dev. 48, 479 (2001).
3. P. KORDOS et al., J. Appl. Phys. 88, 5821 (2000).
4. P. J. HANSEN et al., Appl. Phys. Lett. 72, 2247 (1998).
5. N. G. WEIMANN et al., J. Appl. Phys. 83, 3656 (1998).
6. R. GASKA et al., Mater. Sci Forum 264-268, 1445 (1998).
7. S. M. SZE, in: Physics of Semiconductor Devices, 2nd ed., Wiley 1981.
8. E. H. RHODERICK and H. WILLIAMS, in: Metal-Semiconductor Contacts, OUP 1988.
9. M. A. LAMPERT and P. MARK, in: Current Injection in Solids, Academic Press, New York 1970.
10. I. SHALISH et al., Phys. Rev. B 61, 15573 (2000).