Carrier relaxation dynamics for As defects in GaN

Applied Physics Letters

Volumn 79, Issue 1, 2001, Pages 69-71

  Gil, Bernard ^a   Morel, Aurélien ^a   Taliercio, Thierry ^a   Lefebvre, Pierre ^a   Foxon, C T ^b   Harrison, I ^b   Winser, A J ^b   Novikov, S V ^b,c  

^a UNIV MONTPELLIER   (France)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035796726     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1380400     Document Type: Article

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