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Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 486-490

Growth of GaNAs films by molecular beam epitaxy

(7) Foxon, C T a Novikov, S V a Campion, R P a Davis, C S a Cheng, T S a Winser, A J a Harrison, I a

a UNIVERSITY OF NOTTINGHAM (United Kingdom)

Author keywords

A1. Growth models; A3. Molecular beam epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ARSENIC; FILM GROWTH; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

CUBIC POLYTOPES;

SEMICONDUCTING FILMS;

EID: 0035399206 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00753-9 Document Type: Conference Paper

Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.