Arsenic on cubic GaN surfaces: surfactant effect versus incorporation

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 80-83

  Feuillet, G ^a   Hamaguchi, H ^b   Okumura, H ^b   Yoshida, S ^b  

^a CEA GRENOBLE   (France)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CRYSTAL LATTICES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; SURFACE ACTIVE AGENTS; SURFACE STRUCTURE;

GALLIUM NITRIDE; SURFACE RECONSTRUCTION; SURFACTANT EFFECT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033528956     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00369-9     Document Type: Article

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