Optical and structural properties of GaN films grown on c-plane Al2O3 by electron cyclotron resonance molecular beam epitaxy

Journal of Crystal Growth

Volumn 173, Issue 3-4, 1997, Pages 260-265

  Cho, Sung Hwan ^a   Hata, Kazutaka ^a   Maruyama, Takahiro ^a   Akimoto, Katsuhiro ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Dislocations; Molecular beam epitaxy

Indexed keywords

ALUMINA; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ELECTRON CYCLOTRON RESONANCE; FILM GROWTH; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; STRESS RELAXATION; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE; PHOTOLUMINESCENCE (PL) SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0031123538     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00900-1     Document Type: Article

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