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Volumn 11, Issue 7, 1999, Pages 776-778

Minimization of the linewidth enhancement factor in compressively strained semiconductor lasers

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; MATHEMATICAL MODELS; PHOTONS; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

EID: 0032645392     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.769704     Document Type: Article
Times cited : (18)

References (10)
  • 1
    • 0023148705 scopus 로고
    • Linewidth broadening factor in semiconductor lasers - An overview
    • Jan.
    • M. Osinski and J. Buus, "Linewidth broadening factor in semiconductor lasers - An overview," IEEE J. Quantum Electron., vol. QE-23, pp. 9-28, Jan. 1987.
    • (1987) IEEE J. Quantum Electron. , vol.QE-23 , pp. 9-28
    • Osinski, M.1    Buus, J.2
  • 3
  • 4
    • 0028380710 scopus 로고
    • Theoretical analysis of pure effects of strain and quantum confinement on differential gain in InGaAsP/InP strained-layer quantum-well lasers
    • Feb.
    • S. Seki, T. Yamanaka, W. Lui, Y. Toshikuni, and K. Yokoyama, "Theoretical analysis of pure effects of strain and quantum confinement on differential gain in InGaAsP/InP strained-layer quantum-well lasers," IEEE J. Quantum Electron., vol. 30, pp. 500-510, Feb. 1994.
    • (1994) IEEE J. Quantum Electron. , vol.30 , pp. 500-510
    • Seki, S.1    Yamanaka, T.2    Lui, W.3    Toshikuni, Y.4    Yokoyama, K.5
  • 5
    • 0029287006 scopus 로고
    • Gain, refractive index, linewidth enhancement factor from spontaneous emission of strained GaInP quantum well lasers
    • Apr.
    • G. Hunziker, W. Knop, P. Unger, and C. Harder, "Gain, refractive index, linewidth enhancement factor from spontaneous emission of strained GaInP quantum well lasers," IEEE J. Quantum Electron., vol. 31, pp. 643-646, Apr. 1995.
    • (1995) IEEE J. Quantum Electron. , vol.31 , pp. 643-646
    • Hunziker, G.1    Knop, W.2    Unger, P.3    Harder, C.4
  • 6
    • 0031357560 scopus 로고    scopus 로고
    • Epitaxial structure dependence of the linewidth enhancement factor in GaAs and InGaAs quantum well lasers
    • J. Stohs, D. J. Gallant, D. J. Bossert, and S. R. J. Brueck, "Epitaxial structure dependence of the linewidth enhancement factor in GaAs and InGaAs quantum well lasers," Proc. SPIE, vol. 2994, pp. 542-551, 1997.
    • (1997) Proc. SPIE , vol.2994 , pp. 542-551
    • Stohs, J.1    Gallant, D.J.2    Bossert, D.J.3    Brueck, S.R.J.4
  • 8
    • 0001767809 scopus 로고
    • Semiconductor laser theory with many-body effects
    • H. Haug and S. W. Koch, "Semiconductor laser theory with many-body effects," Phys. Rev. A, vol. 39, no. 4, pp. 1887-1898, 1989.
    • (1989) Phys. Rev. A , vol.39 , Issue.4 , pp. 1887-1898
    • Haug, H.1    Koch, S.W.2
  • 9
    • 0010385899 scopus 로고
    • Many-body treatment on the modulation response in a strained quantum well semiconductor laser medium
    • W. W. Chow, M. F. Pereira, and S. W. Koch, "Many-body treatment on the modulation response in a strained quantum well semiconductor laser medium," Appl. Phys. Lett., vol. 61, no. 7, pp. 758-760, 1992.
    • (1992) Appl. Phys. Lett. , vol.61 , Issue.7 , pp. 758-760
    • Chow, W.W.1    Pereira, M.F.2    Koch, S.W.3
  • 10
    • 0005279546 scopus 로고
    • Many-body effects on the linewidth enhancement factor in quantum well lasers
    • W. W. Chow, S. W. Koch, M. Sargent, and C. Ell, "Many-body effects on the linewidth enhancement factor in quantum well lasers," Appl. Phys. Lett., vol. 58, no. 4, pp. 328-330, 1991.
    • (1991) Appl. Phys. Lett. , vol.58 , Issue.4 , pp. 328-330
    • Chow, W.W.1    Koch, S.W.2    Sargent, M.3    Ell, C.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.