Manipulation of germanium nanocrystals in a tri-layer insulator structure of a metal-insulator-semiconductor memory device

Materials Research Society Symposium - Proceedings

Volumn 728, Issue , 2002, Pages 103-108

  Teo, L W ^a   Heng, C L ^a   Ho, V ^a   Tay, M ^a   Choi, W K ^a   Chim, W K ^a   Antoniadis, D A ^a,b   Fitzgerald, E A ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CRYSTAL STRUCTURE; GRAIN SIZE AND SHAPE; HIGH RESOLUTION ELECTRON MICROSCOPY; MIS DEVICES; SEMICONDUCTING GERMANIUM; SILICA; SPUTTER DEPOSITION; THERMOOXIDATION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

GERMANIUM NANOCRYSTAL; NANOCRYSTAL SIZE; RAPID THERMAL OXIDATION; TRI-LAYER INSULATOR STRUCTURE;

NANOSTRUCTURED MATERIALS;

EID: 0036945547     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-728-s5.7     Document Type: Conference Paper

References (13)

1. W.K. Choi, W.K. Chim, C.L. Heng, L.W. Teo, V. Ho, V. Ng, D.A. Antoniadis and E.A. Fitzgerald, Appl. Phys. Lett. 80 (11), 2014-2016 (2002).
2. S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, and D. Buchanan, International Electron Devices Meeting 1995. IEDM Technical Digest, pp. 521-524.
3. B.H. Choi, S.W. Hwang, I.G. Kim, H.C. Shin, Y. Kim, and K. Kim, Appl. Phys. Lett. 73, 3129-3131 (1998).
4. Y. C. King, T. J. King, and C. Hu, IEEE Trans. on Electron Devices 48 (4), 696-700 (2001).
5. H. I. Hanafi, S. Tiwari, I. Khan, IEEE Trans. on Electron Devices 43 (9), 1553-58 (1996).
6. S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, D. Buchanan, International Electron Devices Meeting 1995. IEDM Technical Digest, pp. 521-524.
7. A. Nakajima, T. Futatsugi, N. Horiguchi, H. Nakao, International Electron Devices Meeting 1997. IEDM Technical Digest, pp. 159-162.
8. I. Kim, S. Han, K. Han, J. Lee, and H. Shin, Jpn. J. Appl. Phys. 40, 447-551 (2001).
9. C. Busseret, A. Souifi, T. Baron, G. Guillot, F. Martin, M.N. Semeria, and J. Gautier, Superlattices and Microstructures 28 (5/6), 493-500 (2000).
10. K.H. Heinig, B. Schmidt, A. Markwitz, R. Grotzschel, M. Strobel, and S. Oswald, Nucl. Instrum. Methods Phys. Res. B148, 969 (1999).
11. C.G. Ahn, H.S. Kang, Y.K. Kwon, S.M. Lee, B.R. Ryum, and B.K. Kang, J. Appl. Phys. 86, 1542 (1999).
12. W.K. Choi, Y.W. Ho, S.P. Ng, and V. Ng, J. Appl. Phys. 89, 2168-2172 (2001).
13. J.J. Welser, S. Tiwari, S. Rishton, K.Y. Lee, and Y. Lee, IEEE Electron Device Letters 18 (6), 278-280 (1997).