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Volumn 716, Issue , 2002, Pages 145-150
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Atomic-layer deposition of ZrO2 thin films using new alkoxide precursors
a,b a,b a b b c c c |
Author keywords
[No Author keywords available]
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Indexed keywords
COMPLEXATION;
DEPOSITION;
DIELECTRIC MATERIALS;
GATES (TRANSISTOR);
OXIDES;
PERMITTIVITY;
THIN FILMS;
ALKOXIDE PRECURSORS;
ATOMIC LAYER DEPOSITION;
HIGH PERMITTIVITY GATE DIELECTRIC APPLICATIONS;
ZIRCONIUM DIOXIDE THIN FILMS;
ZIRCONIA;
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EID: 0036945504
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-716-b3.5 Document Type: Conference Paper |
Times cited : (8)
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References (19)
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