A no-snapback LDMOSFET with automotive ESD endurance

IEEE Transactions on Electron Devices

Volumn 49, Issue 11, 2002, Pages 2047-2053

  Kawamoto, Kazunori ^a   Takahashi, Shigeki ^a   Fujino, Seiji ^a   Shirakawa, Isao ^b  

^a DENSO CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Breakdown characteristics; Electrostatic discharge (ESD); Lateral double diffused MOSFET (LDMOSFET); Power integrated circuits

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; ELECTRIC DISCHARGES; ELECTRIC POTENTIAL; ELECTROSTATICS; POWER INTEGRATED CIRCUITS; TRANSIENTS;

ELECTROSTATIC DISCHARGE (ESD);

MOSFET DEVICES;

EID: 0036869536     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.804734     Document Type: Article

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