Compact model for the grounded-gate nMOS behaviour under CDM ESD stress

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn , Issue , 1996, Pages 302-315

  Russ, Christian ^a   Verhaege, Koen ^a   Bock, Karlheinz ^a   Roussel, Philippe J ^a   Groeseneken, Guido ^a   Maes, Herman E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISCHARGES; ELECTROSTATICS; GATES (TRANSISTOR); MOS DEVICES; SEMICONDUCTOR DEVICE MODELS;

CHARGED DEVICE MODEL (CDM) ELECTROSTATIC DISCHARGE (ESD) STRESS; GROUNDED GATE NMOS TRANSISTORS; PARASITIC BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0030384441     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (41)