Analysis of lateral dmos power devices under bsd stress conditions

IEEE Transactions on Electron Devices

Volumn 47, Issue 11, 2000, Pages 2128-2137

  Mergens, Markus P J ^a  

^a ROBERT BOSCH GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC DISCHARGES; ELECTRIC NETWORK TOPOLOGY; ELECTRIC PROPERTIES; ELECTROSTATICS; EMISSION SPECTROSCOPY; POWER ELECTRONICS; SEMICONDUCTOR DEVICE TESTING; TRANSMISSION LINE THEORY; TWO DIMENSIONAL;

ELECTROSTATIC DISCHARGE; EMISSION MICROSCOPY; HUMAN BODY MODEL TESTING; INHOMOGENEOUS TRIGGERING; LATERAL DOUBLE DIFFUSED MOS DEVICES; MULTIFINGER DEVICES; POWER TRANSISTORS; SINGLE FINGER DEVICES; TRANSMISSION LINE PULSE; TWO DIMENSIONAL DEVICE SIMULATION;

MOSFET DEVICES;

EID: 0034315344     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.877175     Document Type: Article

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