Using "adaptive resurf" to improve to SOA of Ldmos transistors

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 345-348

  Hower, P ^a   Lin, J ^a   Merchant, S ^a   Paiva, S ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRONS; ION IMPLANTATION; OXIDES; PRODUCT DESIGN; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

ADAPTIVE RESURF; FIELD OXIDE; LDMOS TRANSISTORS; SAFE OPERATING AREA;

MOSFET DEVICES;

EID: 0034449710     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. A new adaptive resurt concept for 20V LDMOS without breakdown voltage degradation at high current
2. Analysis of high current breakdown and UIS behavior of resurf LDMOS (RLDMOS) devices
3. Safe operating area considerations in Ldmos transistors
4. Snapback and safe operating area of Ldmos transistors
5. Kirk effect limitations in high voltage IC's
6. Energy capability of lateral and vertical DMOS transistors in an advanced automotive smart power technology
7. Clamped inductive switching of LDMOST for smart power IC's
8. Power mosfet failure revisited