Cavities in helium implanted and annealed silicon characterized by spectroscopic ellipsometry

Journal of Applied Physics

Volumn 86, Issue 8, 1999, Pages 4160-4165

  Fukarek, W ^a   Kaschny, J R ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000825422     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371341     Document Type: Article

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