X-ray diffraction studies of epitaxial laterally overgrown (ELOG) GaN layers on sapphire substrates

Journal of Crystal Growth

Volumn 245, Issue 1-2, 2002, Pages 37-49

  Domagala, J Z ^a   Zytkiewicz, Z R ^a   Beaumont, B ^b   Kozlowski, J ^c   Czernetzki, R ^d   Prystawko, P ^d   Leszczynski, M ^d  

^a INSTITUTE OF PHYSICS   (Poland)

^b CNRS   (France)

^c WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^d INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

A1. Dislocations; A1. High resolution X ray diffraction; A1. Stresses; A1. X ray transmission; A3. Epitaxial lateral overgrowth; A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; MASKS; SAPPHIRE; STRESSES; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL LATERAL OVERGROWTH (ELOG);

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0036836744     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01705-0     Document Type: Article

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