Crystallographic tilting in high-misfit (100) semiconductor heteroepitaxial systems

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 2, 1996, Pages 425-430

  Riesz, Ferenc ^a,b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

CRYSTALLOGRAPHIC TILTING; MISFIT DISLOCATIONS; MISORIENTATION; SEMICONDUCTOR HETEROEPITAXIAL SYSTEMS; VICINAL SUBSTRATES;

CRYSTALLOGRAPHY;

EID: 0030106531     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580100     Document Type: Article

References (48)

1. H. Nagai, J. Appl. Phys. 45, 3789 (1974).
2. G. H. Olsen and R. T. Smith, Phys. Status Solidi A 31, 739 (1975).
3. J. E. Ayers, S. K. Ghandhi, and L. J. Schowalter, J. Cryst. Growth 113, 430 (1991).
4. F. K. LeGoues, P. M. Mooney, and J. Tersoff, Phys. Rev. Lett. 71, 396 (1993); 71, 3234 (1993); P. M. Mooney, F. K. LeGoues, J. Tersoff, and J. O. Chu, J. Appl. Phys. 75, 3968 (1994).
5. F. K. LeGoues, P. M. Mooney, and J. Tersoff, Phys. Rev. Lett. 71, 396 (1993); 71, 3234 (1993); P. M. Mooney, F. K. LeGoues, J. Tersoff, and J. O. Chu, J. Appl. Phys. 75, 3968 (1994).
6. F. K. LeGoues, P. M. Mooney, and J. Tersoff, Phys. Rev. Lett. 71, 396 (1993); 71, 3234 (1993); P. M. Mooney, F. K. LeGoues, J. Tersoff, and J. O. Chu, J. Appl. Phys. 75, 3968 (1994).
7. A. Pesek, K. Hingerl, F. Riesz, and K. Lischka, Semicond. Sci. Technol. 6, 705 (1991).
8. See, for example, P. Maige, J. Vac. Sci. Technol. A 10, 489 (1992); S. L. Morelhão, and L. P. Cardoso, J. Appl. Phys. 73, 4218 (1993); M. Gailhanou, J. F. Carlin, and U. Oesterle, J. Cryst. Growth 140, 205 (1994).
9. See, for example, P. Maige, J. Vac. Sci. Technol. A 10, 489 (1992); S. L. Morelhão, and L. P. Cardoso, J. Appl. Phys. 73, 4218 (1993); M. Gailhanou, J. F. Carlin, and U. Oesterle, J. Cryst. Growth 140, 205 (1994).
10. See, for example, P. Maige, J. Vac. Sci. Technol. A 10, 489 (1992); S. L. Morelhão, and L. P. Cardoso, J. Appl. Phys. 73, 4218 (1993); M. Gailhanou, J. F. Carlin, and U. Oesterle, J. Cryst. Growth 140, 205 (1994).
11. P. Auvray, M. Baudet, and A. Regreny, J. Cryst. Growth 95, 228 (1989).
12. For a review of strain relaxation models, see, for example, E. A. Fitzgerald, Mater. Sci. Rep. 7, 87 (1991).
13. F. Riesz, Mater. Res. Soc. Symp. Proc. 379, 97 (1995); J. Appl. Phys. (in press).
14. F. Riesz, Mater. Res. Soc. Symp. Proc. 379, 97 (1995); J. Appl. Phys. (in press).
15. R. J. Matyi, J. W. Lee, and H. F. Schaake, J. Electron. Mater. 17, 87 (1988).
16. F. Riesz, K. Lischka, K. Rakennus, T. Hakkarainen, and A. Pesek, J. Cryst. Growth 114, 127 (1991). and unpublished work.
17. F. Riesz, J. Varrio, A. Pesek, and K. Lischka, Appl. Surf. Sci. 75, 248 (1994).
18. L. J. Schowalter, E. L. Hall, N. Lewis, and S. Hashimoto, Thin Solid Films 184, 437 (1990).
19. L. Tapfer, J. R. Martinez, and K. Ploog, Semicond. Sci. Technol. 4, 617 (1989).
20. H.-S. Kim, Y. Kim, M.-S. Kim, and S.-K. Min, J. Cryst. Growth 92, 507 (1988).
21. R. Bean, K. Zanio, and J. Ziegler, J. Vac. Sci. Technol. A 7, 343 (1989).
22. J. W. Lee, J. P. Salerno, R. P. Gale, and J. C. C. Fan, Mater. Res. Soc. Symp. Proc. 91, 33 (1987).
23. S. K. Ghandhi and J. E. Ayers, Appl. Phys. Lett. 53, 1204 (1988).
24. M. Fatemi, J. Chaudhuri, J. Mittereder, and A. Christou, J. Appl. Phys. 73, 1154 (1993); the tilt directions reported in this article should read with the opposite sign (M. Fatemi, personal communication).
25. M. Fatemi, J. Chaudhuri, J. Mittereder, and A. Christou, J. Appl. Phys. 73, 1154 (1993); the tilt directions reported in this article should read with the opposite sign (M. Fatemi, personal communication).
26. For a review, see C. P. Flynn, Mater. Res. Soc. Bull. June 30 (1991).
27. J. M. Kang, C. S. Son, M.-S. Kim, Y. Kim, S.-K. Min, and C. S. Kim, Appl. Phys. Lett. 67, 641 (1995).
28. R. Hull and A. Fischer-Colbrie, Appl. Phys. Lett. 50, 851 (1987).
29. J. G. Zhu and C. B. Carter, Philos. Mag. A 62, 319 (1990).
30. T. George, E. R. Weber, S. Nozaki, A. T. Wu, N. Noto, and M. Umeno, J. Appl. Phys. 67, 2441 (1990).
31. F. Riesz, G. Radnóczi, B. Pécz, K. Rakennus, T. Hakkarainen, A. Pesek, and K. Lischka, Mater. Res. Soc. Symp. Proc. 263, 461 (1992).
32. M. Lentzen, D. Gerthsen, A. Förster, and K. Urban, Appl. Phys. Lett. 60, 74 (1992).
33. K. Adomi, J.-I. Chyi, S. F. Fang, T. C. Shen, S. Strite, and H. Morkoç, Thin Solid Films 205, 182 (1991).
34. F. Riesz, J. Cryst. Growth 123, 309 (1992).
35. K. Nozawa and Y. Horikoshi, Jpn. J. Appl. Phys. 32, 626 (1993).
36. F. Riesz, Jpn. J. Appl. Phys. 32, 4754 (1993).
37. J. Varrio H. Asonen, M. Hovinen, M. Pessa, K. Ishida, and H. Kitijawe, Mater. Res. Soc. Symp. Proc. 110, 91 (1988).
38. F. Riesz, Vacuum 46, 1021 (1995).
39. T. E. Crumbaker, H. Y. Lee, M. J. Hafich, and G. Y. Robinson, Appl. Phys. Lett. 54, 140 (1989).
40. C. A. Tran, R. A. Masut, P. Cova, and J. L. Brebner, Jpn. J. Appl. Phys. 30, 2063 (1991).
41. D. I. Westwood, D. A. Woolf, S. A. Clark, and R. H. Williams. Mater. Sci. Eng. B 9, 151 (1991).
42. F. Riesz, J. Cryst. Growth 140, 213 (1994).
43. F. Ernst and P. Pirouz, J. Mater. Res. 4, 834 (1989).
44. J. E. Ayers, L. J. Schowalter, and S. K. Ghandhi, J. Cryst. Growth 125, 329 (1992); J. E. Ayers, J. Appl. Phys. 78, 3724 (1995).
45. J. E. Ayers, L. J. Schowalter, and S. K. Ghandhi, J. Cryst. Growth 125, 329 (1992); J. E. Ayers, J. Appl. Phys. 78, 3724 (1995).
46. M. Tachikawa and M. Yamaguchi, Appl. Phys. Lett. 56, 484 (1990).
47. M. Tachikawa and H. Mori, Appl. Phys. Lett. 56, 2225 (1990).
48. T. Suzuki, M. Mori, Z. K. Jiang, T. Soga, T. Jimbo, and M. Umeno, Jpn. J. Appl. Phys. 31, 2079 (1992).