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Microelectronic Engineering

Volumn 64, Issue 1-4, 2002, Pages 351-360

Dependence of the minimal PVD TA(N) sealing thickness on the porosity of Zirkon™ LK dielectric films

(12) Iacopi, F a,b Zistl, C c Jehoul, C d Tokei, Zs a Le, Q T a Das, A a Sullivan, C d Prokopowicz, G d Gronbeck, D d Gallagher, M d Calvert, J d Maex, K a,b

a IMEC (Belgium)

b UNIVERSITY OF LEUVEN (Belgium)

c IBM MICROELECTRONICS (United States)

d SHIPLEY COMPANY (United States)

Author keywords

Cu drift barrier; Ellipsometric porosimetry; Porous low k films; Sealing; Zirkon

Indexed keywords

ELECTRIC CONNECTORS; ELLIPSOMETRY; PHYSICAL VAPOR DEPOSITION; PORE SIZE; POROSIMETERS; POROSITY; POROUS MATERIALS; SURFACE TREATMENT;

ELLIPSOMETRIC POROSIMETRY;

DIELECTRIC FILMS;

EID: 0036776718 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(02)00808-0 Document Type: Conference Paper

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.