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Volumn 482-485, Issue PART 2, 2001, Pages 891-897

Surface morphology and reconstruction changes during heteroepitaxial growth of InAs on GaAs(0 0 1)-(2 x 4)

Author keywords

Gallium arsenide; Indium arsenide; Scanning tunneling microscopy; Surface structure, morphology, roughness, and topography

Indexed keywords


EID: 0001259669     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)01073-6     Document Type: Article
Times cited : (18)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.