Interdefect charge exchange in silicon particle detectors at cryogenic temperatures

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 4, 2002, Pages 1750-1755

  MacEvoy, Barry ^a   Santocchia, Attilio ^a,b   Hall, Geoff ^a   Moscatelli, Francesco ^b,c   Passeri, Daniele ^b,c   Bilei, Gian Mario ^c  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b INFN SEZIONE DI PERUGIA   (Italy)

^c UNIVERSITY OF PERUGIA   (Italy)

Author keywords

Position sensitive particle detectors; Semiconductor defects; Semiconductor device radiation effects; Silicon; Temperature

Indexed keywords

COLLIDING BEAM ACCELERATORS; CRYOGENICS; CRYSTAL DEFECTS; RADIATION HARDENING; SILICON;

INTERDEFECT CHARGE EXCHANGE;

PARTICLE DETECTORS;

EID: 0036702941     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.801668     Document Type: Article

References (18)

1. The CMS Collaboration, The Tracker Project Technical Design Report, CERN/LHCC 98-6, CMS TDR 5, Apr. 15, 1998.
2. F. Lemeilleur, S.J. Bates, A. Chilingarov, C. Furetta, M. Glaser, and E.H.M. Heijne et al., "Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between -20°C and +20°C," Nucl. Instrum. Methods, vol. A360, pp. 438-444, 1995.
3. K. Gill, G. Hall, and B. MacEvoy, "Bulk damage effects in irradiated silicon detectors due to clustered divacancies," J. Appl. Phys., vol. 82, pp. 126-136, 1997.
4. V.A.J. van Lint, "The physics of radiation damage in particle detectors," Nucl. Instrum. Methods, vol. A253, pp. 453-459, 1987.
5. G. Davies, E.C. Lightowlers, R.C. Newman, and A.S. Oates, "A model for radiation damage effects in carbon-doped crystalline silicon," Semiconduct. Sci. Technol., vol. 2, pp. 524-532, 1987.
6. B.C. MacEvoy, G. Hall, and K. Gill, "Defect evolution in irradiated silicon detector material," Nucl. Instrum. Methods, vol. A374, pp. 12-26, 1996.
7. W. Shockley and W.T. Read, "Statistics of the recombinations of holes and electrons," Phys. Rev., vol. 87, pp. 835-842, 1952.
8. R.N. Hall, "Electron-hole recombination in germanium," Phys. Rev., vol. 87, p. 387, 1952.
9. B.C. MacEvoy and G. Hall, "Defect kinetics in novel detector materials," Mater Sci. Semiconduct. Processing, vol. 3, pp. 243-249, 2000.
10. M. Ahmed, S.J. Watts, J. Matheson, and A. Holmes-Siedle, "Deep-level transient spectroscopy studies of silicon detectors after 24 GeV proton irradiation and 1 MeV neutron irradiation," Nucl. Instrum. Methods, vol. A457, pp. 588-594, 2001.
11. S.J. Watts, J. Matheson, I.H. Hopkins-Bond, A. Holmes-Siedle, A. Mohammadzadeh, and R. Pace, "A new model for generation-recombination in silicon depletion regions after neutron irradiation," IEEE Trans. Nucl. Sci., vol. 43, pp. 2587-2594, Dec. 1996.
12. A.M. Frens, M.T. Bennebroek, A. Zakrzewski, J. Schmidt, W.M. Chen, and E. Janzén et al., "Observation of rapid direct charge transfer between deep defects in silicon," Phys. Rev. Lett., vol. 72, pp. 2939-2942, 1994.
13. B.C. MacEvoy, A. Santocchia, and G. Hall, "Defect-engineering rad-hard particle detectors: The role of impurities and inter-defect charge exchange," Phys. B, vol. 273-274, pp. 1045-1049, 1999.
14. F. Moscatelli, A. Santocchia, D. Passeri, G.M. Bilei, B.C. MacEvoy, G. Hall, and P. Placidi, "An enhanced approach to numerical modeling of heavily irradiated silicon devices," Nucl. Instrum. Methods, vol. B186, pp. 171-175, 2002.
15. D. Passeri, P. Ciampolini, G. Bilei, and F. Moscatelli, "Comprehensive modeling of bulk-damage effects in silicon radiation detectors," IEEE Trans. Nucl. Sci., vol. 48, pp. 1688-1693, Oct. 2001.
16. S.M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
17. B. Dezillie, V. Eremin, Z. Li, and E. Verbitskaya, "Polarization of silicon detectors by minimum ionizing particles," Nucl. Instrum. Methods, vol. A452, pp. 440-453, 2000.
18. A. Hallen, N. Keskitalo, F. Masszi, and V. Nagl, "Lifetime in proton irradiated silicon," J. Appl. Phys., vol. 79, no. 8, pp. 3906-3914, Apr. 1996.