An enhanced approach to numerical modeling of heavily irradiated silicon devices

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 171-175

  Moscatelli, F ^a,b   Santocchia, A ^b,c   Passeri, D ^a,b   Bilei, G M ^b   MacEvoy, B C ^c   Hall, G ^c   Placidi, P ^a  

^a UNIVERSITY OF PERUGIA   (Italy)

^b INFN SEZIONE DI PERUGIA   (Italy)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Cluster; Defect; Radiation modelling; Silicon detector

Indexed keywords

DEFECTS; RADIATION DAMAGE; RADIATION DETECTORS;

RADIATION MODELLING; SILICON MICROSTRIP DETECTORS;

SILICON SENSORS;

EID: 0036136721     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00899-0     Document Type: Article

References (14)