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Volumn 52, Issue 14, 1988, Pages 1170-1172

Surface processes in CF4/O2 reactive etching of silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 36549102976     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.99195     Document Type: Article
Times cited : (68)

References (13)
  • 12
    • 84950794380 scopus 로고    scopus 로고
    • These data were obtained from the integrated fluorine [formula omitted] and oxygen Is peak areas and the deconvoluted Si [formula omitted] spectra with the use of published photoionization cross sections, inelastic mean free paths for O [formula omitted], F 1s, and Si [formula omitted] in silicon dioxide, and the dependence of the analyzer transmission on kinetic energy.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.