Two-dimensional self-consistent simulation of a triangular P-channel SOI nano-flash memory device

IEEE Transactions on Electron Devices

Volumn 49, Issue 8, 2002, Pages 1420-1426

  Tang, Xiaohui ^b   Baie, Xavier ^c   Colinge, Jean Pierre ^a,d   Gustin, Cedric ^b   Bayot, Vincent ^b  

^a IEEE

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^c IBM   (United States)

^d University of California Davis   (United States)

Author keywords

Hole distribution; Nano flash memory; Quantum mechanical effects; Self consistent simulation; Threshold voltage shift

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; COMPUTER SIMULATION; FLASH MEMORY; GATES (TRANSISTOR); MOSFET DEVICES; POISSON EQUATION; QUANTUM THEORY; SEMICONDUCTOR QUANTUM WIRES; THRESHOLD VOLTAGE; TWO DIMENSIONAL;

ENERGY SUBBANDS; HOLE DISTRIBUTION; NANO FLASH MEMORY DEVICE; QUANTUM PHYSICS; SCHRODINGER EQUATION; SOFTWARE PACKAGE TSUPREM; THRESHOLD VOLTAGE SHIFT; WAVE FUNCTIONS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036684716     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.801307     Document Type: Article

References (19)

1. Room-temperature single-electron memory
2. A room-temperature silicon single-electron metal-oxide-semiconductor memory with nanoscale floating-gate and ultra narrow channel
3. Room temperature operation of a quantum-dot flash memory
4. Room temperature operation of Si single-electron memory with self-aligned floating dot gate
5. Room temperature single electron effects in a Si nano-crystal memory
6. Fabrication, characterization and self-consistent simulation of SOI nano flash memory device
7. Self-consistent quantum mechanical calculations in ultra-thin silicon-on-insulator structures
8. Two-dimensional confinement effects in gate-all-around (GAA) MOSFETs
9. Calculation of two-dimensional quantum-confined structures using the finite element method
10. Threshold voltage increase by quantum mechanical narrow channel effect in ultra-narrow MOSFETs
11. Three-dimensional self-consistent simulation of silicon quantum-dot floating-gate flash memory device
12. Self-aligned SOI nano flash memory device
13. Characterization and modeling of threshold voltage shift due to quantum mechanical effects in pMOSFET
14. Evidence of two-dimensional carrier confinement in thin n-channel gate-all-around (GAA) devices
15. Investigation of dynamic memory effects in Si-dot devices