Characterization and modeling of threshold voltage shift due to quantum mechanical effects in pMOSFET

Solid-State Electronics

Volumn 44, Issue 7, 2000, Pages 1335-1339

  Ma, Yutao ^a   Liu, Litian ^a   Yu, Zhiping ^b   Li, Zhijian ^a  

^a TSINGHUA UNIVERSITY   (China)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

QUANTUM MECHANICAL EFFECTS (QME);

MOSFET DEVICES;

EID: 0033742924     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00042-3     Document Type: Article

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