Three-dimensional self-consistent simulation of silicon quantum-dot floating-gate flash memory device

IEEE Electron Device Letters

Volumn 20, Issue 6, 1999, Pages 286-288

  Thean, A ^a   Leburton, J P ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS;

FLASH MEMORIES; POISSON EQUATIONS; SCHRODINGER EQUATIONS;

NONVOLATILE STORAGE;

EID: 0032636118     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.767100     Document Type: Article

References (8)

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