Two-dimensional confinement effects in gate-all-around (GAA) MOSFETs

Solid-State Electronics

Volumn 42, Issue 4, 1998, Pages 499-504

  Baie, X ^a   Colinge, J P ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; GATES (TRANSISTOR); PARTIAL DIFFERENTIAL EQUATIONS; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

ELECTRON CONFINEMENT; GATE ALL AROUND MOSFETS; POISSON EQUATION; SCHRODINGER EQUATION;

MOSFET DEVICES;

EID: 0032041556     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00061-6     Document Type: Article

References (7)

1. Colinge, J. P., Gao, M. H., Romano, A., Maes, H. and Claeys, C., Technical Digest of IEDM, 1990, p. 595.
2. Ouisse, J. Appl. Phys., 1994, 76(10), 5989.
3. Francis, P., Terao, A., Flandre, D. and Van de Wiele, F., IEEE Trans. Electron Dev. , 1994, 41(5), 715.
4. Beenakker, C. W. J. and Van Houten, H., in Solid-State Physics, ed. H. Ehrenreich and D. Turnbull, Vol. 44. Academic Press, 1991, pp. 1-228.
5. Ando, T., Fowler, A. B. and Stern, F., Rev. Mod. Phys., 1982, 54, 437.
6. Colinge, J. P., Baie, X. and Bayot, V., IEEE Electron Dev. Lett., 1994, 15, 193.
7. Balestra, F., Cristoloveanu, S., Benachir, M., Brini, J. and Elewa, T., IEEE Electron Dev. Lett., 1987, 8, 410.