Evidence for atomic H insertion into strained Si-Si bonds in the amorphous hydrogenated silicon subsurface from in situ infrared spectroscopy

Applied Physics Letters

Volumn 71, Issue 26, 1997, Pages 3832-3834

  Von Keudell, A ^a,b   Abelson, J R ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b MAX PLANCK INSTITUT FÜR PLASMAPHYSIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000972014     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120544     Document Type: Article

References (12)

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