SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 396, Issue 1-3, 1998, Pages 227-240

A quasi-equilibrium model for the uptake kinetics of hydrogen atoms on Si(100)

(4) Flowers, Michael C a Jonathan, Neville B H a Morris, Alan a Wright, Steven a,b

a UNIVERSITY OF SOUTHAMPTON (United Kingdom)

b UNIVERSITY OF SOUTHERN DENMARK (Denmark)

Author keywords

Adsorption kinetics; Models of surface kinetics; Silicon; Single crystal surfaces; Thermal desorption spectroscopy

Indexed keywords

ADSORPTION; ATOMS; CHEMICAL BONDS; CHEMISORPTION; DEUTERIUM; DIFFUSION; HYDROGEN; ISOMERIZATION; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SURFACES; TEMPERATURE PROGRAMMED DESORPTION;

ADSORPTION KINETICS; SURFACE KINETICS; THERMAL DESORPTION SPECTROSCOPY;

REACTION KINETICS;

EID: 0031698691 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)00672-9 Document Type: Article

Times cited : (33)

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