Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050 nm

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 496-502

  Bugge, F ^a   Zeimer, U ^a   Gramlich, S ^a   Rechenberg, I ^a   Sebastian, J ^a   Erbert, G ^a   Weyers, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); CRYSTAL DEFECTS; ELECTRIC CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS;

DISTRIBUTED BRAGG REFLECTORS (DBR);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034497791     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00751-X     Document Type: Article

References (11)

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