Roughness-enhanced reliability of MOS tunneling diodes

IEEE Electron Device Letters

Volumn 23, Issue 7, 2002, Pages 431-433

  Lin, C H ^a,b   Yuan, F ^a,b   Shie, C R ^b   Chen, K F ^b   Hsu, B C ^b   Lee, M H ^b   Pai, W W ^b   Liu, C W ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Electroluminescence; MOS; Reliability; Roughness; Ultrathin oxide

Indexed keywords

ROUGHNESS SCATTERING; VERY HIGH VACUUM PREBAKE TECHNOLOGY; WEIBULL PLOT; X RAY REFLECTIVITY;

ATOMIC FORCE MICROSCOPY; ELECTROLUMINESCENCE; ELECTRON SCATTERING; ELECTRON TUNNELING; INTERFACES (MATERIALS); LIGHT EMISSION; LIGHT REFLECTION; RELIABILITY; ROUGHNESS MEASUREMENT; SEMICONDUCTING SILICON; SILICA; TUNNEL DIODES;

MOS DEVICES;

EID: 0036646703     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1015232     Document Type: Article

References (18)

1. Correlation between inversion layer mobility and surface roughness measured by AFM
2. A comprehensive study of MOSFET electron mobility in both weak and strong inversion regimes
3. Degradation of time-dependent dielectric breakdown characteristics of MOS capacitors by silicon surface roughness
4. Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes
5. Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing
6. Comment on 'Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing
7. Correlation between Si-H/D bond desorption and injtected electron energy in metal-oxide-silicon tunneling diodes
8. On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing
9. Role of holes in the isotope effect and mechanisms for the metal-oxide-semiconductor device degradation
10. The isotope effect of hydrogen release in the metal/oxide/n-silicon tunneling diodes
11. Degradation of ultra-thin gate oxides accompanies by hole direct tunneling: Can we keep long-term reliability of p-MOSFETs?
12. Surface hydrogenation as a method to purify and flatten a silicon surface
13. 2
14. Oxide roughness effect on tunneling current of MOS diodes
15. Conformal oxides on Si surfaces
16. Ultra-thin gate dielectrics: They break down, but do they fail?
17. Enhanced reliability of electroluminescence from metal-oxide-silicon tunneling diodes by deuterium incorporation
18. 2