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Volumn 78, Issue 24, 2001, Pages 3839-3841

Surface hydrogenation as a method to purify and flatten a silicon surface

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0035844371     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1377314     Document Type: Article
Times cited : (7)

References (18)
  • 6
    • 0041752761 scopus 로고    scopus 로고
    • Japan Patent No. 50265 (pending)
    • S. Higai and T. Ohno, Japan Patent No. 50265 (pending).
    • Higai, S.1    Ohno, T.2
  • 9
    • 0003754095 scopus 로고
    • edited by P. Ziesche and H. Eschrig Akademie, Berlin
    • J. P. Perdew, Electronic Structure of Solids, edited by P. Ziesche and H. Eschrig (Akademie, Berlin, 1991).
    • (1991) Electronic Structure of Solids
    • Perdew, J.P.1
  • 14
    • 0042253453 scopus 로고    scopus 로고
    • note
    • L, because it is 0.19 eV less stable than the P site.
  • 15
    • 0042754732 scopus 로고    scopus 로고
    • note
    • B site by the surface hydrogenation.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.